A. Pakfar: search on Z-Library

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1

Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs

E.M. Bazizi, A. Pakfar, P.F. Fazzini, F. Cristiano, C. Tavernier, A. Claverie, N. Zographos, C. Zechner, E. Scheid

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 796 KB

english, 2010

2

Overlayer stress effects on defect formation in Si and Ge

Nick E.B. Cowern, Nick S. Bennett, Chihak Ahn, Joo Chul Yoon, Silke Hamm, Wilfried Lerch, Hamid Kheyrandish, Filadelfo Cristiano, Ardechir Pakfar

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 972 KB

english, 2010

3

Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium

P.F. Fazzini, F. Cristiano, E. Talbot, G. Ben Assayag, S. Paul, W. Lerch, A. Pakfar, J.M. Hartmann

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 703 KB

english, 2010

4

A New Degradation Mode for Heterojunction Bipolar Transistors Under Reverse-Bias Stress

Ruat, M., Angers, R., Pakfar, A., Ghibaudo, G., Chantre, A., Revil, N., Pananakakis, G.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 1.36 MB

english, 2006

5

Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks

Essa, Z., Gaumer, C., Pakfar, A., Gros-Jean, M., Juhel, M., Panciera, F., Boulenc, P., Tavernier, C., Cristiano, F.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 2.03 MB

english, 2012

6

[IEEE 2008 International Workshop on Junction Technology (IWJT) - Shanghai, China (2008.05.15-2008.05.16)] Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08) - Defect evolution and C+/F+ co-implantation in millisecond Flash annealed ultra-shallow junctions

Cristiano, F., Bazizi, E.M., Fazzini, P.F., Paul, S., Lerch, W., Boninelli, S., Duffy, R., Pakfar, A., Bourdon, H., Milesi, F.

Year:

2008

Language:

english

File:

PDF, 373 KB

english, 2008

7

Enthalpy based modeling of pulsed excimer laser annealing for process simulation

M. Hackenberg, P. Pichler, K. Huet, R. Negru, J. Venturini, A. Pakfar, C. Tavernier, A. La Magna

Journal:

Applied Surface Science

Year:

2012

Language:

english

File:

PDF, 494 KB

english, 2012

8

Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors

Essa, Z., Pelletier, B., Morin, P., Boulenc, P., Pakfar, A., Tavernier, C., Wacquant, F., Zechner, C., Juhel, M., Autran, J.L., Cristiano, F.

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 652 KB

english, 2016

9

Modelling of Boron Trapping at End-of-Range defects in pre-amorphized ultra-shallow junctions

E.M. Bazizi, P.F. Fazzini, C. Zechner, A. Tsibizov, H. Kheyrandish, A. Pakfar, L. Ciampolini, C. Tavernier, F. Cristiano

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 558 KB

english, 2008

10

[IEEE 1999 Joint Meeting of the European Frequency and Time Forum and the IEEE International Frequency Control Symposium - Besancon, France (13-16 April 1999)] Proceedings of the 1999 Joint Meeting of the European Frequency and Time Forum and the IEEE International Frequency Control Symposium (Cat. No.99CH36313) - A comprehensive mapping of surface acoustic wave properties on gallium orthophosphate (GaPO/sub 4/)

Briot, E.H., Bigler, E., Daniau, W., Marianneau, G., Pakfar, A.

Year:

1999

Language:

english

File:

PDF, 398 KB

english, 1999

11

Experimental investigations and simulation of the deactivation of arsenic during thermal processes after activation by SPER and spike annealing

A. Martinez-Limia, P. Pichler, W. Lerch, S. Paul, H. Kheyrandish, A. Pakfar, C. Tavernier

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 889 KB

english, 2008

12

Dopant diffusion in SiGe: modeling stress and Ge chemical effects

Journal:

Materials Science and Engineering: B

Year:

2002

Language:

english

File:

PDF, 123 KB

english, 2002

13

Using Intelligent Educational Technology in Computer Network

Beheshti, Mobina, Pakfar, Amir

Journal:

Procedia - Social and Behavioral Sciences

Year:

2014

Language:

english

File:

PDF, 1.37 MB

english, 2014

14

Continuum simulation of solid phase epitaxial regrowth of amorphized silicon including most advanced physical interactions

Julien Delalleau, Ardechir Pakfar, El-Medhi Bazizi, Roberto Simola, Clement Tavernier

Journal:

physica status solidi (a)

Year:

2011

Language:

english

File:

PDF, 277 KB

english, 2011

15

ECS Transactions [ECS 220th ECS Meeting - Boston, MA (October 9 - October 14, 2011)] - Precipitation of Antimony Implanted into Silicon

Koffel, Stephane, Pichler, Peter, Reading, Michael A., Van den Berg, Jakob, Kheyrandish, Hamid, Hamm, Silke, Lerch, Wilfried, Pakfar, Ardechir, Tavernier, Clement

Year:

2012

Language:

english

File:

PDF, 484 KB

english, 2012

16

[IEEE 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC) - Athens, Greece (2009.09.14-2009.09.18)] 2009 Proceedings of the European Solid State Device Research Conference - Comparison between 65nm bulk and PD-SOI MOSFETs: Si/BOX interface effect on point defects and doping profiles

Bazizi, E.M., Pakfar, A., Fazzini, P. F., Cristiano, F., Tavernier, C., Claverie, A., Burenkov, A., Pichler, P.

Year:

2009

Language:

english

File:

PDF, 1.35 MB

english, 2009

17

[IEEE 2008 International Workshop on Junction Technology (IWJT) - Shanghai, China (2008.05.15-2008.05.16)] Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08) - Process models for advanced annealing schemes and their use in device simulation

Pichler, P., Martinez-Limia, A., Kampen, C., Burenkov, A., Schermer, J., Paul, S., Lerch, W., Gelpey, J., McCoy, S., Kheyrandish, H., Pakfar, A., Tavernier, C., Bolze, D.

Year:

2008

Language:

english

File:

PDF, 950 KB

english, 2008

18

Modeling Dopant Diffusion in SiGe and SiGeC alloys

Pakfar, Ardechir, Holliger, Philippe, Poncet, Alain, Fellous, Cyril, Dutartre, Didier, Schwartzmann, Thierry, Jaouen, Hervé

Journal:

MRS Proceedings

Year:

2004

Language:

english

File:

PDF, 70 KB

english, 2004

19

Extended Point Defects in Crystalline Materials: Ge and Si

Cowern, N. E. B., Simdyankin, S., Ahn, C., Bennett, N. S., Goss, J. P., Hartmann, J.-M., Pakfar, A., Hamm, S., Valentin, J., Napolitani, E., De Salvador, D., Bruno, E., Mirabella, S.

Journal:

Physical Review Letters

Year:

2013

Language:

english

File:

PDF, 519 KB

english, 2013

20

Expressions of pathologic markers in PRP based chondrogenic differentiation of human adipose derived stem cells

Pakfar, Arezou, Irani, Shiva, Hanaee-Ahvaz, Hana

Journal:

Tissue and Cell

Year:

2016

Language:

english

File:

PDF, 1.25 MB

english, 2016

21

[IET 20th International Conference and Exhibition on Electricity Distribution (CIRED 2009) - Prague, Czech Republic (8-11 June 2009)] IET Conference Publications - A new technique in distribution network reconfiguration for loss reduction and optimum operation

Hosseinzadeh, F., Alinejad, B., Pakfar, K.

Year:

2009

Language:

english

File:

PDF, 617 KB

english, 2009

22

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Transfer of physically-based models from process to device simulations: Application to advanced Strained Si/SiGe MOSFETs

Bazizi, E. M., Fazzini, P. F., Cristiano, F., Pakfar, A., Tavernier, C., Payet, F., Skotnicki, T., Zechner, C., Zographos, N., Matveev, D., Cowern, N. E. B., Bennett, N.S., Ahn, C., Yoon, J.C.

Year:

2010

Language:

english

File:

PDF, 2.59 MB

english, 2010

23

Extended Defects Evolution in Pre-Amorphised Silicon after Millisecond Flash Anneals

Cristiano, Fuccio, Bazizi, El Mehdi, Fazzini, Pier Francesco, Boninelli, Simona, Duffy, Ray, Pakfar, Ardechir, Paul, Silke, Lerch, Wilfried

Journal:

Materials Science Forum

Year:

2008

Language:

english

File:

PDF, 1.92 MB

english, 2008

24

Vacancy Engineering – An Ultra-Low Thermal Budget Method for High-Concentration 'Diffusionless' Implantation Doping

Cowern, Nicholas E.B., Smith, Andrew J., Bennett, Nicholas, Sealy, Brian J., Gwilliam, Russell, Webb, Roger P., Colombeau, Benjamin, Paul, Silke, Lerch, Wilfried, Pakfar, Ardechir

Journal:

Materials Science Forum

Year:

2008

Language:

english

File:

PDF, 468 KB

english, 2008

25

[IEEE 2017 IEEE International Integrated Reliability Workshop (IIRW) - Fallen Leaf Lake, CA (2017.10.8-2017.10.12)] 2017 IEEE International Integrated Reliability Workshop (IIRW) - Impact of hot carrier stress on small-signal parameters of FD-SOI NMOSFETs

Chohan, T., Slesazeck, S., Trommer, J., Pesic, M., Lehmann, S., Pakfar, A., Harame, D., Mikolajick, T.

Year:

2017

Language:

english

File:

PDF, 365 KB

english, 2017

26

[IEEE 2009 IEEE International SOI Conference - Foster City, CA, USA (2009.10.5-2009.10.8)] 2009 IEEE International SOI Conference - PD-SOI MOSFETs: interface effect on point defects and doping profiles

Bazizi, E.M., Pakfar, A., Fazzini, P. F., Cristiano, F., Tavernier, C., Claverie, A., Burenkov, A., Pichler, P.

Year:

2009

Language:

english

File:

PDF, 413 KB

english, 2009

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